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Part Datasheet Search > IGBTs > Infineon > IGB01N120H2ATMA1 Datasheet PDF
IGB01N120H2ATMA1
$ 1.049
IGB01N120H2ATMA1 Datasheet PDF (12 Pages)
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IGB01N120H2ATMA1 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
TO-263-3
Power Dissipation
28000 mW
Breakdown Voltage (Collector to Emitter)
1200 V
Input Power (Max)
28 W
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-40 ℃
Power Dissipation (Max)
28000 mW

IGB01N120H2ATMA1 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Not Recommended for New Designs
Packaging
Tape & Reel (TR)
Operating Temperature
-40℃ ~ 150℃ (TJ)

IGB01N120H2ATMA1 Documents

Infineon
12 Pages / 1.15 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
73 Pages / 2.93 MByte
Infineon
48 Pages / 2 MByte

IGB01N120H2 Documents

Infineon
Trans IGBT Chip N-CH 1.2kV 3.2A 3Pin TO-263 T/R
Infineon
Trans IGBT Chip N-CH 1.2kV 3.2A 3Pin(2+Tab) TO-263
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