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Part Datasheet Search > IGBTs > Infineon > IGB20N60H3ATMA1 Datasheet PDF
IGB20N60H3ATMA1
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IGB20N60H3ATMA1 Datasheet PDF (14 Pages)
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IGB20N60H3ATMA1 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
TO-263-3
Number of Positions
3 Position
Power Dissipation
170 W
Breakdown Voltage (Collector to Emitter)
600 V
Input Power (Max)
170 W
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-40 ℃
Power Dissipation (Max)
170000 mW

IGB20N60H3ATMA1 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Operating Temperature
-40℃ ~ 175℃ (TJ)

IGB20N60H3ATMA1 Documents

Infineon
14 Pages / 1.59 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
73 Pages / 2.93 MByte
Infineon
48 Pages / 2 MByte

IGB20N60H3 Documents

Infineon
Trans IGBT Chip N-CH 600V 40A 3Pin TO-263 T/R
Infineon
Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-263AB, GREEN, PLASTIC, TO-263, 3Pin
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