IGB30N60H3ATMA1 Datasheet PDF - Infineon

●Summary of Features:

● Designed specifically to replace planar MOSFETs in applications switching at frequencies below 70kHz

● Low switching losses for high efficiency

● Excellent V ce(sat) behavior thanks to the famous Infineon TRENCHSTOP™ technology

● Fast switching behavior with low EMI emissions

● Optimized diode for target applications, meaning further improvement in switching losses

● Low gate resistor selection possible (down to 5Ω) whilst maintaining excellent switching behaviour

● Short circuit capability

● Offering T j(max) of 175°C

● Packaged with and without freewheeling diode for increased design freedom

●Benefits:

● Excellent cost/performance

● Low switching and conduction losses

● Very good EMI behavior

● A small gate resistor for reduced delay time and voltage overshoot

● Smaller die sizes -> smaller packages

● Best-in-class IGBT efficiency and EMI behavior