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Part Datasheet Search > IGBTs > Infineon > IGD01N120H2BUMA1 Datasheet PDF
IGD01N120H2BUMA1
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IGD01N120H2BUMA1 Datasheet PDF (13 Pages)
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IGD01N120H2BUMA1 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
TO-252-3
Power Dissipation
28000 mW
Breakdown Voltage (Collector to Emitter)
1200 V
Input Power (Max)
28 W
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-40 ℃
Power Dissipation (Max)
28000 mW

IGD01N120H2BUMA1 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Not Recommended for New Designs
Packaging
Tape & Reel (TR)
Operating Temperature
-40℃ ~ 150℃ (TJ)

IGD01N120H2BUMA1 Documents

Infineon
13 Pages / 0.94 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
73 Pages / 2.93 MByte
Infineon
48 Pages / 2 MByte

IGD01N120H2 Documents

Infineon
Trans IGBT Chip N-CH 1200V 3.2A 28000mW 3Pin(2+Tab) DPAK T/R
Infineon
Trans IGBT Chip N-CH 1200V 3.2A 28000mW 3Pin(2+Tab) DPAK T/R
Infineon
Trans IGBT Chip N-CH 1200V 3.2A 28000mW 3Pin(2+Tab) DPAK
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