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Part Datasheet Search > IGBTs > Infineon > IGP15N60TXKSA1 Datasheet PDF
IGP15N60TXKSA1
$ 0.816
IGP15N60TXKSA1 Datasheet PDF (12 Pages)
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IGP15N60TXKSA1 Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-220-3
Power Dissipation
130000 mW
Breakdown Voltage (Collector to Emitter)
600 V
Input Power (Max)
130 W
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-40 ℃
Power Dissipation (Max)
130000 mW

IGP15N60TXKSA1 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Operating Temperature
-40℃ ~ 175℃ (TJ)

IGP15N60TXKSA1 Documents

Infineon
12 Pages / 0.48 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
73 Pages / 2.93 MByte
Infineon
48 Pages / 2 MByte

IGP15N60 Documents

Infineon
Insulated Gate Bipolar Transistor, 30A I(C), 600V V(BR)CES, N-Channel, TO-220AB, GREEN, PLASTIC, TO-220, 3Pin
Infineon
Trans IGBT Chip N-CH 600V 26A 130000mW 3Pin(3+Tab) TO-220AB Tube
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