IGP50N60TXKSA1 Datasheet PDF - Infineon

●The IGP50N60T is a 600V Discrete IGBT Single Transistor without anti-parallel diode. TRENCHSTOP™ IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of trench top-cell and filed stop concept. Combination of IGBT with soft recovery emitter controlled diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses.

● Lowest Vce (sat) drop for lower conduction losses

● Low switching losses

● Easy parallel switching capability due to positive temperature coefficient in Vce (sat)

● Very soft, fast recovery anti-parallel emitter controlled diode

● High ruggedness, temperature stable behavior

● Low EMI emissions

● Low gate charge

● Very tight parameter distribution

● Comprehensive portfolio in 600V and 1200V for flexibility of design

● High device reliability

● ±20V Gate to emitter voltage (VGE)

● 0.45K/W IGBT thermal resistance, junction to case

● 40K/W IGBT thermal resistance, junction - ambient