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Part Datasheet Search > IGBTs > Infineon > IKP20N65H5XKSA1 Datasheet PDF
IKP20N65H5XKSA1
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IKP20N65H5XKSA1 Datasheet PDF (17 Pages)
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IKP20N65H5XKSA1 Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-220-3
Number of Positions
3 Position
Power Dissipation
125 W
Breakdown Voltage (Collector to Emitter)
650 V
Reverse recovery time
52 ns
Input Power (Max)
125 W
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-40 ℃
Power Dissipation (Max)
125000 mW

IKP20N65H5XKSA1 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Operating Temperature
-40℃ ~ 175℃ (TJ)

IKP20N65H5XKSA1 Documents

Infineon
17 Pages / 2.23 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
73 Pages / 2.93 MByte
Infineon
48 Pages / 2 MByte
Infineon
2 Pages / 0.35 MByte

IKP20N65H5 Documents

Infineon
Transistor: IGBT; 650V; 20A; 125W; TO220-3; Series: H5
Infineon
Trans IGBT Chip N-CH 650V 42A 125000mW 3Pin(3+Tab) TO-220 Tube
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