IPA60R190P6XKSA1 Datasheet PDF - Infineon

●The IPA60R190P6 is a N-channel power MOSFET with 650VDS drain source voltage. Infineon"s CoolMOS™ P6 product family is designed to enable higher system efficiency whilst being easy to design in. CoolMOS™ P6 closes the gap between technologies which focus on delivering ultimate performance and those which concentrate more on ease of use.

● Reduced gate charge (Qg)

● Higher V th

● Good body diode ruggedness

● Optimized integrated Rg

● Improved dV/dt from 50V/ns

● CoolMOS™ quality with over 12 years manufacturing experience in Superjunction technology

● Increased MOSFET dV/dt ruggedness

● Extremely low losses due to very low FOM RDS (ON) x Qg and Eoss

● Very high commutation ruggedness

● Easy to use/drive

● Improved efficiency especially in light load condition

● Better efficiency in soft switching applications due to earlier turn-OFF