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Part Datasheet Search > MOSFETs > Infineon > IPA80R1K4P7XKSA1 Datasheet PDF
IPA80R1K4P7XKSA1
$ 0.767

IPA80R1K4P7XKSA1 Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-220-3
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
1.2 Ω
Power Dissipation
24 W
Threshold Voltage
3 V
Drain to Source Voltage (Vds)
800 V
Rise Time
8 ns
Input Capacitance (Ciss)
250pF @500V(Vds)
Fall Time
20 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
24W (Tc)

IPA80R1K4P7XKSA1 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Rail, Tube
Operating Temperature
-55℃ ~ 150℃ (TJ)

IPA80R1K4P7XKSA1 Documents

Infineon
13 Pages / 0.94 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
33 Pages / 1.03 MByte
Infineon
37 Pages / 2.01 MByte
Infineon
1 Pages / 0.13 MByte

IPA80R1K4P7 Documents

Infineon
Trans MOSFET N-CH 800V 4A 3Pin(3+Tab) TO-220FP Tube
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