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IPB072N15N3GE818XT Datasheet PDF - Infineon

Manufacturer:

Infineon

Category:

MOSFETs

Case Package:

TO-263-3

Description:

MOSFET N-Ch 150V 100A D2PAK-2

Pictures:

3D Model

Symbol

Footprint

Pinout

Product Pictures

Documentation:

IPB072N15N3GE818XT Datasheet (12 Pages)

IPB072N15N3GE818XT Datasheet PDF (12 Pages)

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IPB072N15N3GE818XT Specifications

TYPE

DESCRIPTION

Mounting Style

Surface Mount

Case/Package

TO-263-3

Number of Channels

1 Channel

Drain to Source Resistance (on) (Rds)

7.2 mΩ

Power Dissipation

300 W

Breakdown Voltage (Drain to Source)

150 V

Rise Time

35 ns

Fall Time

14 ns

Operating Temperature (Max)

175 ℃

Operating Temperature (Min)

55 ℃

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IPB072N15N3GE818XT Size & Package

TYPE

DESCRIPTION

Packaging

Tape & Reel (TR)

Size-Length

10 mm

Size-Width

9.25 mm

Size-Height

4.4 mm

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IPB072N15N3GE818XT Environmental

IPB072N15N3GE818XT Documents

IPB072N15N3GE818XT Datasheet

Infineon

12 Pages / 0.71 MByte

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