IPB108N15N3GATMA1 Datasheet PDF - Infineon

●The IPB108N15N3 G is an OptiMOS™ N-channel Power MOSFET ideal for high-frequency switching and synchronous rectification. It achieves a reduction in RDS (ON) of 40% and of 45% in figure of merit (FOM) compared to the next best competitor. This drastic improvement opens new possibilities like moving from leaded packages to SMD packages or effectively replacing two old parts with one OptiMOS™ part.

● World"s lowest RDS (ON)

● Very low Qg and Qgd

● Excellent gate charge x RDS (ON) product (FOM)

● MSL1 rated 2

● Environmentally friendly

● Highest power density

● Less paralleling required

● Smallest board-space consumption

● Easy-to-design products

● Normal level

● Qualified according to JEDEC for target applications

● Halogen-free, Green device