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Part Datasheet Search > Infineon > IPB60R060P7 Datasheet PDF
IPB60R060P7
$ 9.848

IPB60R060P7 Specifications

TYPE
DESCRIPTION
Case/Package
TO-263
Rise Time
12 ns
Input Capacitance (Ciss)
2895pF @400V(Vds)
Fall Time
4 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
164000 mW

IPB60R060P7 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Operating Temperature
-55℃ ~ 150℃

IPB60R060P7 Documents

Infineon
14 Pages / 1.14 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
37 Pages / 2.89 MByte
Infineon
37 Pages / 2.01 MByte

IPB60R060 Documents

Infineon
Trans MOSFET N-CH 600V 48A 3Pin(2+Tab) D2PAK T/R
Infineon
D2PAK N-CH 600V 37.9A
Infineon
The 600V CoolMOS™ P7 is the successor to the 600V CoolMOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the CoolMOS™ 7th generation platform ensure its high efficiency.
Infineon
N-CH 600V 35A 60mOhm TO263
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