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Part Datasheet Search > MOSFETs > Infineon > IPB60R165CP Datasheet PDF
IPB60R165CP
$ 8.085
IPB60R165CP Datasheet PDF (10 Pages)
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IPB60R165CP Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Voltage Rating (DC)
600 V
Current Rating
21.0 A
Case/Package
TO-263-3
Number of Channels
1 Channel
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.15 Ω
Polarity
N-Channel
Power Dissipation
192 W
Threshold Voltage
3 V
Input Capacitance
2.00 nF
Gate Charge
52.0 nC
Drain to Source Voltage (Vds)
650 V
Breakdown Voltage (Drain to Source)
600 V
Continuous Drain Current (Ids)
21.0 A
Rise Time
5 ns
Input Capacitance (Ciss)
2000pF @100V(Vds)
Input Power (Max)
192 W
Fall Time
5 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
192W (Tc)

IPB60R165CP Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Not Recommended
Packaging
Tape & Reel (TR)
Size-Length
10 mm
Size-Width
9.25 mm
Size-Height
4.4 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

IPB60R165CP Documents

Infineon
10 Pages / 0.28 MByte
Infineon
11 Pages / 0.25 MByte
Infineon
6 Pages / 1.89 MByte

IPB60R165 Documents

Infineon
D2PAK N-CH 650V 21A
Infineon
D2PAK N-CH 650V 21A
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