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IPC90N04S53R6ATMA1 Datasheet PDF - Infineon

Manufacturer:

Infineon

Case Package:

PG-TDSON-8

Description:

Mosfet n-Ch 20V 40V 8tdson

Pictures:

3D Model

Symbol

Footprint

Pinout

Product Pictures

Documentation:

IPC90N04S53R6ATMA1 Datasheet (9 Pages)IPC90N04S53R6ATMA1 Application Note (35 Pages)

IPC90N04S53R6ATMA1 Specifications

TYPE

DESCRIPTION

Number of Pins

8 Pin

Case/Package

PG-TDSON-8

Number of Positions

8 Position

Drain to Source Resistance (on) (Rds)

0.003 Ω

Power Dissipation

63 W

Threshold Voltage

2.8 V

Drain to Source Voltage (Vds)

40 V

Rise Time

2 ns

Input Capacitance (Ciss)

1500pF @25V(Vds)

Fall Time

4 ns

Operating Temperature (Max)

175 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

63000 mW

View Datasheet >

IPC90N04S53R6ATMA1 Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Tape & Reel (TR)

View Datasheet >

IPC90N04S53R6ATMA1 Environmental

IPC90N04S53R6ATMA1 Function Overview

IPC90N04S53R6ATMA1 Documents

IPC90N04S53R6ATMA1 Datasheet

Infineon

9 Pages / 0.38 MByte

IPC90N04S53R6ATMA1 Other Datasheet PDF

Infineon

28 Pages / 4.06 MByte

IPC90N04S53R6ATMA1 Application Note

Infineon

35 Pages / 2.04 MByte

IPC90N04S53R6 Documents

IPC90N04S5-3R6 Datasheet PDF

Infineon

Transistor: N-MOSFET; unipolar; 40V; 90A; 63W; PG-TDSON-8

IPC90N04S53R6ATMA1 Datasheet PDF

Infineon

Mosfet n-Ch 20V 40V 8tdson

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