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IPD200N15N3G Datasheet PDF - Infineon

Manufacturer:

Infineon

Category:

MOSFETs

Case Package:

DPAK-252

Description:

Trans MOSFET N-CH 150V 50A Automotive 3Pin(2+Tab) DPAK T/R

Pictures:

3D Model

Symbol

Footprint

Pinout

Product Pictures

Documentation:

IPD200N15N3G Datasheet (12 Pages)

IPD200N15N3G Datasheet PDF (12 Pages)

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IPD200N15N3G Specifications

TYPE

DESCRIPTION

Mounting Style

Surface Mount

Number of Pins

3 Pin

Case/Package

DPAK-252

Polarity

N-Channel

Power Dissipation

150 W

Rise Time

11 ns

Input Capacitance (Ciss)

1820pF @75V(Vds)

Fall Time

6 ns

Operating Temperature (Max)

175 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

150000 mW

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IPD200N15N3G Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Tape & Reel (TR)

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IPD200N15N3G Environmental

IPD200N15N3G Documents

IPD200N15N3G Datasheet

Infineon

12 Pages / 0.97 MByte

IPD200N15N3 Documents

IPD200N15N3GATMA1 Datasheet PDF

Infineon

DPAK N-CH 150V 50A

IPD200N15N3 G Datasheet PDF

Infineon

The IPD200N15N3 G is a 150V N-channel Power MOSFET that achieves a reduction in RDS (on) of 40% and of 45% in Figure of Merit (FOM). The OptiMOS™ MOSFET offers high system efficiency and industry's lowest RDS (on) within the voltage classes. It is ideally suited for high frequency switching applications and optimized technology for DC-DC converters.

IPD200N15N3GBTMA1 Datasheet PDF

Infineon

DPAK N-CH 150V 50A

IPD200N15N3G Datasheet PDF

Infineon

Trans MOSFET N-CH 150V 50A Automotive 3Pin(2+Tab) DPAK T/R