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Part Datasheet Search > MOSFETs > Infineon > IPD200N15N3GBTMA1 Datasheet PDF
IPD200N15N3GBTMA1
$ 1.075
IPD200N15N3GBTMA1 Datasheet PDF (12 Pages)
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IPD200N15N3GBTMA1 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
TO-252-3
Power Rating
150 W
Polarity
N-Channel
Power Dissipation
150 W
Drain to Source Voltage (Vds)
150 V
Continuous Drain Current (Ids)
50A
Rise Time
11 ns
Input Capacitance (Ciss)
1820pF @75V(Vds)
Fall Time
6 ns
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
150W (Tc)

IPD200N15N3GBTMA1 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Obsolete
Packaging
Tape & Reel (TR)
Size-Height
2.3 mm
Operating Temperature
-55℃ ~ 175℃ (TJ)

IPD200N15N3GBTMA1 Documents

Infineon
12 Pages / 0.97 MByte
Infineon
16 Pages / 0.37 MByte
Infineon
7 Pages / 0.07 MByte

IPD200N15N3 Documents

Infineon
DPAK N-CH 150V 50A
Infineon
The IPD200N15N3 G is a 150V N-channel Power MOSFET that achieves a reduction in RDS (on) of 40% and of 45% in Figure of Merit (FOM). The OptiMOS™ MOSFET offers high system efficiency and industry's lowest RDS (on) within the voltage classes. It is ideally suited for high frequency switching applications and optimized technology for DC-DC converters.
Infineon
DPAK N-CH 150V 50A
Infineon
Trans MOSFET N-CH 150V 50A Automotive 3Pin(2+Tab) DPAK T/R
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