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Part Datasheet Search > MOSFETs > Infineon > IPD50N06S4L08ATMA1 Datasheet PDF
IPD50N06S4L08ATMA1
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IPD50N06S4L08ATMA1 Datasheet PDF (9 Pages)
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IPD50N06S4L08ATMA1 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Case/Package
TO-252-3
Number of Channels
1 Channel
Drain to Source Resistance (on) (Rds)
6.3 mΩ
Polarity
N-CH
Power Dissipation
71 W
Threshold Voltage
1.2 V
Drain to Source Voltage (Vds)
60 V
Breakdown Voltage (Drain to Source)
60 V
Continuous Drain Current (Ids)
50A
Rise Time
2 ns
Input Capacitance (Ciss)
4780pF @25V(Vds)
Fall Time
8 ns
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
55 ℃
Power Dissipation (Max)
71W (Tc)

IPD50N06S4L08ATMA1 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Obsolete
Packaging
Tape & Reel (TR)
Size-Length
6.5 mm
Size-Width
6.22 mm
Size-Height
2.3 mm
Operating Temperature
-55℃ ~ 175℃ (TJ)

IPD50N06S4L08ATMA1 Documents

Infineon
9 Pages / 0.15 MByte
Infineon
6 Pages / 0.31 MByte

IPD50N06S4L08 Documents

Infineon
DPAK N-CH 60V 50A
Infineon
DPAK N-CH 60V 50A
Infineon
DPAK N-CH 60V 50A
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