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Part Datasheet Search > MOSFETs > Infineon > IPD60R1K4C6 Datasheet PDF
IPD60R1K4C6
$ 0.252
IPD60R1K4C6 Datasheet PDF (14 Pages)
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IPD60R1K4C6 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
TO-252-3
Number of Channels
1 Channel
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
1.26 Ω
Polarity
N-Channel
Power Dissipation
28.4 W
Threshold Voltage
3 V
Drain to Source Voltage (Vds)
600 V
Continuous Drain Current (Ids)
3.2A
Rise Time
7 ns
Input Capacitance (Ciss)
200pF @100V(Vds)
Input Power (Max)
28.4 W
Fall Time
20 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
28.4W (Tc)

IPD60R1K4C6 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Discontinued at Digi-Key
Packaging
Tape & Reel (TR)
Size-Length
6.73 mm
Size-Width
6.22 mm
Size-Height
2.41 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

IPD60R1K4C6 Documents

Infineon
14 Pages / 1.27 MByte
Infineon
14 Pages / 1.29 MByte

IPD60R1K4 Documents

Infineon
DPAK N-CH 650V 3.2A
Infineon
DPAK N-CH 650V 3.2A
Infineon
DPAK N-CH 650V 3.2A
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