IPD60R1K4C6BTMA1 Datasheet PDF - Infineon

●The IPD60R1K4C6 is a 600V CoolMOS™ C6 N-channel Power MOSFET offers easy control of switching behaviour. This CoolMOS™ is a revolutionary technology for high voltage power MOSFET, designed according to the super-junction(SJ) principle and pioneered by Infineon Technologies. The CoolMOS™ C6 combines the experience of the leading SJ MOSFET supplier with high class innovation. The device provides all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter and cooler.

● Extremely low losses due to very low figure of merit (RDS (ON) x Qg and EOSS)

● Very high commutation ruggedness

● Easy to use

● Better light load efficiency

● Outstanding reliability with proven CoolMOS™ quality combined with high body diode ruggedness

● Better performance in comparison to previous CoolMOS™ generations

● More efficient, more compact, lighter and cooler

● Improved power density

● Improved reliability

● General purpose part can be used in both soft and hard switching topologies

●For MOSFET paralleling the use of ferrite beads on the gate or separate totem poles is generally recommended.