IPD60R600P6ATMA1 Datasheet PDF - Infineon

●Summary of Features:

● Reduced gate charge (Q g)

● Higher V th

● Good body diode ruggedness

● Optimized integrated R g

● Improved dv/dt from 50V/ns

● CoolMOS™ quality with over 12 years manufacturing experience in superjunction technology

●Benefits:

● Improved effciency especially in light load condition

● Better efficiency in soft switching applications due to earlier turn-off

● Suitable for hard- & soft-switching topologies

● Optimized balance of efficiency and ease of use and good controllability of switching behavior

● High robustness and better efficiency

● Outstanding quality & reliability