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IPD640N06LGBTMA1 Datasheet PDF - Infineon

Manufacturer:

Infineon

Category:

MOSFETs

Case Package:

TO-252-3

Description:

DPAK N-CH 60V 18A

Pictures:

3D Model

Symbol

Footprint

Pinout

Product Pictures

Documentation:

IPD640N06LGBTMA1 Datasheet (9 Pages)IPD640N06LGBTMA1 User Reference Manual Guide (270 Pages)IPD640N06LGBTMA1 Application Note (37 Pages)

IPD640N06LGBTMA1 Datasheet PDF (9 Pages)

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IPD640N06LGBTMA1 Specifications

TYPE

DESCRIPTION

Mounting Style

Surface Mount

Number of Pins

3 Pin

Case/Package

TO-252-3

Number of Positions

3 Position

Drain to Source Resistance (on) (Rds)

0.047 Ω

Polarity

N-Channel

Power Dissipation

47 W

Threshold Voltage

1.6 V

Drain to Source Voltage (Vds)

60 V

Continuous Drain Current (Ids)

18A

Rise Time

25 ns

Input Capacitance (Ciss)

470pF @30V(Vds)

Input Power (Max)

47 W

Fall Time

32 ns

Operating Temperature (Max)

175 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

47W (Tc)

View Datasheet >

IPD640N06LGBTMA1 Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Not Recommended for New Designs

Packaging

Tape & Reel (TR)

Size-Length

6.5 mm

Size-Width

6.22 mm

Size-Height

2.3 mm

Operating Temperature

-55℃ ~ 175℃ (TJ)

View Datasheet >

IPD640N06LGBTMA1 Environmental

IPD640N06LGBTMA1 Function Overview

IPD640N06LGBTMA1 Documents

IPD640N06LGBTMA1 Datasheet

Infineon

9 Pages / 0.97 MByte

IPD640N06LGBTMA1 User Reference Manual Guide

Infineon

270 Pages / 11.59 MByte

IPD640N06LGBTMA1 Other Datasheet PDF

Infineon

30 Pages / 0.64 MByte

IPD640N06LGBTMA1 Application Note

Infineon

37 Pages / 2.01 MByte

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IPD640N06L G Datasheet PDF

Infineon

Trans MOSFET N-CH 60V 18A 3Pin TO-252 T/R

IPD640N06LGBTMA1 Datasheet PDF

Infineon

DPAK N-CH 60V 18A

IPD640N06LG Datasheet PDF

Infineon

N-channel Mosfet 20v300v Power Transistor Power Mosfet

IPD640N06LGXT Datasheet PDF

Infineon

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IPD640N06LG_08 Datasheet PDF

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OptiMOSÂ® Power-Transistor Features For fast switching converters and sync. rectification

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