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Part Datasheet Search > MOSFETs > Infineon > IPD65R600E6ATMA1 Datasheet PDF
IPD65R600E6ATMA1
$ 1.53
IPD65R600E6ATMA1 Datasheet PDF (17 Pages)
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IPD65R600E6ATMA1 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
TO-252-3
Power Rating
63 W
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.54 Ω
Polarity
N-Channel
Power Dissipation
63 W
Threshold Voltage
3 V
Drain to Source Voltage (Vds)
650 V
Continuous Drain Current (Ids)
7.3A
Rise Time
8 ns
Input Capacitance (Ciss)
440pF @100V(Vds)
Fall Time
11 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
63W (Tc)

IPD65R600E6ATMA1 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Size-Length
6.5 mm
Size-Width
6.22 mm
Size-Height
2.3 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

IPD65R600E6ATMA1 Documents

Infineon
17 Pages / 1.88 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
40 Pages / 0.46 MByte
Infineon
37 Pages / 2.01 MByte

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DPAK N-CH 650V 7.3A
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DPAK N-CH 650V 7.3A
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N-CHANNEL POWER MOSFET
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