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Part Datasheet Search > MOSFETs > Infineon > IPD80R1K4CEATMA1 Datasheet PDF
IPD80R1K4CEATMA1
$ 0.546
IPD80R1K4CEATMA1 Datasheet PDF (15 Pages)
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IPD80R1K4CEATMA1 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Case/Package
TO-252-3
Power Rating
63 W
Number of Channels
1 Channel
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
1.2 Ω
Polarity
N-CH
Power Dissipation
63 W
Threshold Voltage
3 V
Input Capacitance
570 pF
Drain to Source Voltage (Vds)
800 V
Continuous Drain Current (Ids)
3.9A
Rise Time
15 ns
Input Capacitance (Ciss)
570pF @100V(Vds)
Fall Time
12 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
63W (Tc)

IPD80R1K4CEATMA1 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Size-Length
6.73 mm
Size-Width
6.22 mm
Operating Temperature
-55℃ ~ 150℃

IPD80R1K4CEATMA1 Documents

Infineon
15 Pages / 2.27 MByte
Infineon
40 Pages / 0.46 MByte
Infineon
27 Pages / 1.55 MByte

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