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Part Datasheet Search > MOSFETs > Infineon > IPP05CN10NGXKSA1 Datasheet PDF
IPP05CN10NGXKSA1
$ 3.514

IPP05CN10NGXKSA1 Datasheet PDF - Infineon

Manufacturer:
Infineon
Category:
MOSFETs
Case Package:
TO-220-3
Description:
TO-220 N-CH 100V 100A
Pictures:
3D Model
Symbol
Footprint
Pinout
Product Pictures
Documentation:
IPP05CN10NGXKSA1 Datasheet (11 Pages)IPP05CN10NGXKSA1 User Reference Manual Guide (270 Pages)IPP05CN10NGXKSA1 Application Note (37 Pages)
IPP05CN10NGXKSA1 Datasheet PDF (11 Pages)
View Datasheet
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IPP05CN10NGXKSA1 Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Voltage Rating (DC)
100 V
Current Rating
100 A
Case/Package
TO-220-3
Polarity
N-Channel
Power Dissipation
300 W
Input Capacitance
12.0 nF
Gate Charge
181 nC
Drain to Source Voltage (Vds)
100 V
Continuous Drain Current (Ids)
100 A
Rise Time
42 ns
Input Capacitance (Ciss)
12000pF @50V(Vds)
Input Power (Max)
300 W
Fall Time
21 ns
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
300W (Tc)
View Datasheet >

IPP05CN10NGXKSA1 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Not Recommended for New Designs
Packaging
Tube
Size-Length
10.36 mm
Size-Width
4.57 mm
Size-Height
15.95 mm
Operating Temperature
-55℃ ~ 175℃ (TJ)
View Datasheet >

IPP05CN10NGXKSA1 Documents

IPP05CN10NGXKSA1 Datasheet
Infineon
11 Pages / 0.76 MByte
IPP05CN10NGXKSA1 User Reference Manual Guide
Infineon
270 Pages / 11.59 MByte
IPP05CN10NGXKSA1 Other Datasheet PDF
Infineon
30 Pages / 0.64 MByte
IPP05CN10NGXKSA1 Application Note
Infineon
37 Pages / 2.01 MByte
IPP05CN10NGXKSA1 Other References
Infineon
1 Pages / 0.12 MByte

IPP05CN10 Documents

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IPP05CN10N G Datasheet PDF
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IPP05CN10L G Datasheet PDF
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IPP05CN10N Datasheet PDF
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IPP05CN10NGHKSA1 Datasheet PDF
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TO-220 N-CH 100V 100A
IPP05CN10NGXK Datasheet PDF
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Trans MOSFET N-CH 100V 100A 3Pin(3+Tab) TO-220
IPP05CN10N GXK Datasheet PDF
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The 100V OptiMOS™ family offers superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both R DS(on) and FOM (Figure of Merit).
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