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Part Datasheet Search > MOSFETs > Infineon > IPT60R028G7XTMA1 Datasheet PDF
IPT60R028G7XTMA1
$ 10.68

IPT60R028G7XTMA1 Specifications

TYPE
DESCRIPTION
Number of Pins
9 Pin
Case/Package
PG-HSOF-8
Number of Positions
8 Position
Drain to Source Resistance (on) (Rds)
0.024 Ω
Power Dissipation
391 W
Threshold Voltage
3.5 V
Drain to Source Voltage (Vds)
600 V
Rise Time
9 ns
Input Capacitance (Ciss)
4820pF @400V(Vds)
Fall Time
2.8 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
391000 mW

IPT60R028G7XTMA1 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)

IPT60R028G7XTMA1 Documents

Infineon
14 Pages / 0.96 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
40 Pages / 0.46 MByte
Infineon
37 Pages / 2.01 MByte

IPT60R028G7 Documents

Infineon
A new SMD package using Kelvin source concept
Infineon
Trans MOSFET N-CH 600V 75A T/R
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