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Part Datasheet Search > MOSFETs > Infineon > IPW60R099CPAFKSA1 Datasheet PDF
IPW60R099CPAFKSA1
$ 4.982
IPW60R099CPAFKSA1 Datasheet PDF (11 Pages)
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IPW60R099CPAFKSA1 Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Case/Package
TO-247-3
Number of Channels
1 Channel
Drain to Source Resistance (on) (Rds)
90 mΩ
Polarity
N-CH
Power Dissipation
255 W
Threshold Voltage
2.5 V
Drain to Source Voltage (Vds)
600 V
Breakdown Voltage (Drain to Source)
600 V
Continuous Drain Current (Ids)
31A
Rise Time
5 ns
Input Capacitance (Ciss)
2800pF @100V(Vds)
Fall Time
5 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
40 ℃
Power Dissipation (Max)
255W (Tc)

IPW60R099CPAFKSA1 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Length
16.13 mm
Size-Width
5.21 mm
Size-Height
21.1 mm
Operating Temperature
-55℃ ~ 150℃

IPW60R099CPAFKSA1 Documents

Infineon
11 Pages / 0.44 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
28 Pages / 4.06 MByte
Infineon
56 Pages / 6.94 MByte

IPW60R099 Documents

Infineon
TO-247 N-CH 600V 37.9A
Infineon
TO-247 N-CH 600V 31A
Infineon
TO-247 N-CH 600V 31A
Infineon
TO-247 N-CH 600V 37.9A
Infineon
TO-247 N-CH 600V 22A
Infineon
TO-247 N-CH 600V 37.9A
Infineon
TO-247 N-CH 600V 31A
Infineon
TO-247 N-CH 600V 37.9A
Infineon
Transistor: N-MOSFET; unipolar; 600V; 20A; 117W; PG-TO247-3
Infineon
TO-247 N-CH 600V 31A
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