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Part Datasheet Search > MOSFETs > Infineon > IRF3703PBF Datasheet PDF
IRF3703PBF
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IRF3703PBF Datasheet PDF (9 Pages)
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IRF3703PBF Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-220-3
Power Rating
230 W
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.0028 Ω
Polarity
N-Channel
Power Dissipation
230 W
Threshold Voltage
4 V
Drain to Source Voltage (Vds)
30 V
Continuous Drain Current (Ids)
210A
Rise Time
123 ns
Input Capacitance (Ciss)
8250pF @25V(Vds)
Input Power (Max)
3.8 W
Fall Time
24 ns
Operating Temperature (Max)
175 ℃
Power Dissipation (Max)
3.8W (Ta), 230W (Tc)

IRF3703PBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Operating Temperature
-55℃ ~ 175℃ (TJ)

IRF3703PBF Documents

Infineon
9 Pages / 0.17 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
6 Pages / 3.97 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
37 Pages / 2.01 MByte
Infineon
1 Pages / 0.14 MByte

IRF3703 Documents

International Rectifier
Trans MOSFET N-CH 30V 210A 3Pin(3+Tab) TO-220AB
Infineon
TO-220AB N-CH 30V 210A
IRF
Power MOSFET(Vdss=30V, Rds(on)max=2.8mohm, Id=210A)
Infineon
TO-220AB N-CH 30V 210A
International Rectifier
MOSFET, Power; N-Ch; VDSS 30V; RDS(ON) 2.3Milliohms; ID 210A; TO-220AB; PD 230W; -55de
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