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Part Datasheet Search > MOSFETs > International Rectifier > IRF6216PBF Datasheet PDF
IRF6216PBF
Part 3D Model
$ 0.744
IRF6216PBF Datasheet PDF (8 Pages)
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IRF6216PBF Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
8 Pin
Case/Package
SOIC-8
Number of Channels
1 Channel
Drain to Source Resistance (on) (Rds)
240 mΩ
Polarity
P-Channel
Power Dissipation
2.5 W
Part Family
IRF6216
Threshold Voltage
5 V
Drain to Source Voltage (Vds)
150 V
Breakdown Voltage (Drain to Source)
-150 V
Continuous Drain Current (Ids)
-2.20 A
Rise Time
15 ns
Input Capacitance (Ciss)
1280pF @25V(Vds)
Input Power (Max)
2.5 W
Fall Time
26 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
2500 mW

IRF6216PBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Operating Temperature
-55℃ ~ 150℃

IRF6216PBF Documents

International Rectifier
8 Pages / 0.13 MByte
International Rectifier
4 Pages / 0.19 MByte

IRF6216 Documents

International Rectifier
Trans MOSFET P-CH 150V 2.2A 8Pin SOIC
Infineon
SOIC P-CH 150V 2.2A
Infineon
SOIC P-CH 150V 2.2A
Infineon
SOIC P-CH 150V 2.2A
International Rectifier
MOSFET, Power; P-Ch; VDSS -150V; RDS(ON) 0.24Ω; ID -2.2A; SO-8; PD 2.5W; VGS +/-20V
International Rectifier
Trans MOSFET P-CH 150V 2.2A 8Pin SOIC Tube
International Rectifier
Trans MOSFET P-CH 150V 2.2A 8Pin SOIC T/R
Infineon
Trans MOSFET P-CH 150V 2.2A 8Pin SOIC T/R
Infineon
SOIC P-CH 150V 2.2A
Infineon
-150V Single P-Channel HEXFET Power MOSFET in a SO-8 package
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