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Part Datasheet Search > MOSFETs > Infineon > IRF6721STRPBF Datasheet PDF
IRF6721STRPBF
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IRF6721STRPBF Datasheet PDF (9 Pages)
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IRF6721STRPBF Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
6 Pin
Case/Package
DirectFET-SQ
Power Rating
42 W
Number of Channels
1 Channel
Drain to Source Resistance (on) (Rds)
8.5 mΩ
Polarity
N-CH
Power Dissipation
2.2 W
Drain to Source Voltage (Vds)
30 V
Breakdown Voltage (Drain to Source)
30 V
Continuous Drain Current (Ids)
14A
Rise Time
8.9 ns
Input Capacitance (Ciss)
1430pF @15V(Vds)
Fall Time
5.3 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-40 ℃
Power Dissipation (Max)
2.2W (Ta), 42W (Tc)

IRF6721STRPBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Material
Silicon
Size-Length
4.85 mm
Size-Width
3.95 mm
Size-Height
0.7 mm
Operating Temperature
-40℃ ~ 150℃ (TJ)

IRF6721STRPBF Documents

Infineon
9 Pages / 0.26 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
44 Pages / 3.69 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
37 Pages / 2.01 MByte

IRF6721 Documents

Infineon
Direct-FET N-CH 30V 14A
International Rectifier
Trans MOSFET N-CH 30V 14A 6Pin Direct-FET SQ T/R
International Rectifier
Trans MOSFET N-CH 30V 14A 6Pin Direct-FET SQ T/R
Infineon
Direct-FET N-CH 30V 14A
Infineon
A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET SQ package rated at 14 amperes optimized with low on resistance.
International Rectifier
Power Mosfets
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