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IRF6811STR1PBF
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IRF6811STR1PBF Datasheet PDF (10 Pages)
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IRF6811STR1PBF Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
6 Pin
Case/Package
DirectFET-SQ
Number of Channels
1 Channel
Drain to Source Resistance (on) (Rds)
5.4 mΩ
Polarity
N-CH
Power Dissipation
32 W
Drain to Source Voltage (Vds)
25 V
Breakdown Voltage (Drain to Source)
25 V
Continuous Drain Current (Ids)
19A
Rise Time
19 ns
Input Capacitance (Ciss)
1590pF @13V(Vds)
Fall Time
5.5 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-40 ℃
Power Dissipation (Max)
2.1W (Ta), 32W (Tc)

IRF6811STR1PBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Obsolete
Packaging
Tape & Reel (TR)
Material
Silicon
Size-Length
4.85 mm
Size-Width
3.95 mm
Size-Height
0.7 mm
Operating Temperature
-40℃ ~ 150℃ (TJ)

IRF6811STR1PBF Documents

Infineon
10 Pages / 0.24 MByte
Infineon
3 Pages / 0.36 MByte
Infineon
9 Pages / 0.24 MByte

IRF6811STR1 Documents

International Rectifier
MOSFET 25V 1 N-CH HEXFET 3.7mOhms 11NC
Infineon
Direct-FET N-CH 25V 19A
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