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Part Datasheet Search > MOSFETs > Infineon > IRF7601TR Datasheet PDF
IRF7601TR
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IRF7601TR Datasheet PDF (8 Pages)
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IRF7601TR Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Case/Package
Micro-8
Polarity
N-CH
Power Dissipation
1.8W (Ta)
Drain to Source Voltage (Vds)
20 V
Continuous Drain Current (Ids)
5.7A
Input Capacitance (Ciss)
650pF @15V(Vds)
Power Dissipation (Max)
1.8W (Ta)

IRF7601TR Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Obsolete
Operating Temperature
-55℃ ~ 150℃ (TJ)

IRF7601TR Documents

Infineon
8 Pages / 0.11 MByte
Infineon
5 Pages / 0.11 MByte

IRF7601 Documents

International Rectifier
20V Single N-Channel HEXFET Power MOSFET in a Micro 8 package
Infineon
Micro N-CH 20V 5.7A
IRF
Power MOSFET(Vdss=20V, Rds(on)=0.035Ω)
Infineon
Micro N-CH 20V 5.7A
Infineon
Micro N-CH 20V 5.7A
International Rectifier
Trans MOSFET N-CH 20V 5.7A 8Pin Micro T/R
International Rectifier
MOSFET 20V 1 N-CH HEXFET 35mOhms 14NC
International Rectifier
Trans MOSFET N-CH Si 20V 5.7A 8Pin Micro T/R
Infineon
Micro N-CH 20V 5.7A
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