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IRF7807VD1PBF Datasheet PDF - Infineon

Manufacturer:

Infineon

Category:

MOSFETs

Case Package:

SO-8

Description:

SOIC N-CH 30V 8.3A

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Documentation:

IRF7807VD1PBF Datasheet (10 Pages)

IRF7807VD1PBF Datasheet PDF (10 Pages)

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IRF7807VD1PBF Specifications

TYPE

DESCRIPTION

Mounting Style

Surface Mount

Number of Pins

8 Pin

Case/Package

SO-8

Power Rating

2.5 W

Number of Channels

1 Channel

Drain to Source Resistance (on) (Rds)

25 mΩ

Polarity

N-CH

Power Dissipation

2.5 W

Drain to Source Voltage (Vds)

30 V

Breakdown Voltage (Drain to Source)

30 V

Continuous Drain Current (Ids)

8.3A

Rise Time

1.2 ns

Input Power (Max)

2.5 W

Fall Time

2.2 ns

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

55 ℃

Power Dissipation (Max)

2.5W (Ta)

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IRF7807VD1PBF Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Obsolete

Packaging

Tube

Material

Silicon

Size-Length

4.9 mm

Size-Width

3.9 mm

Size-Height

1.75 mm

Operating Temperature

-55℃ ~ 150℃ (TJ)

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IRF7807VD1PBF Environmental

IRF7807VD1PBF Function Overview

IRF7807VD1PBF Documents

IRF7807VD1PBF Datasheet

Infineon

10 Pages / 1.12 MByte

IRF7807VD1PBF Other Datasheet PDF

Infineon

14 Pages / 0.17 MByte

IRF7807VD1 Documents

IRF7807VD1 Datasheet PDF

International Rectifier

MOSFET N-CH 30V 8.3A 8-SOIC

IRF7807VD1 Datasheet PDF

Infineon

SOIC N-CH 30V 8.3A

IRF7807VD1 Datasheet PDF

IRF

FETKY⑩ MOSFET / SCHOTTKY DIODE

IRF7807VD1TRPBF Datasheet PDF

International Rectifier

Trans MOSFET N-CH 30V 8.3A 8Pin SOIC T/R

IRF7807VD1TRPBF Datasheet PDF

Infineon

SOIC N-CH 30V 8.3A

IRF7807VD1PBF Datasheet PDF

International Rectifier

Trans MOSFET N-CH 30V 8.3A 8Pin SOIC Tube

IRF7807VD1TR Datasheet PDF

International Rectifier

MOSFET N-CH 30V 8.3A 8-SOIC

IRF7807VD1TR Datasheet PDF

Infineon

SOIC N-CH 30V 8.3A

IRF7807VD1PBF Datasheet PDF

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SOIC N-CH 30V 8.3A

IRF7807VD1PBF-1 Datasheet PDF

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N-channel HEXFET POWER MOSFET and Schottky Diode

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