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Part Datasheet Search > MOSFETs > Infineon > IRF8327STRPBF Datasheet PDF
IRF8327STRPBF
$ 0.221
IRF8327STRPBF Datasheet PDF (10 Pages)
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IRF8327STRPBF Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
6 Pin
Case/Package
Direct-FET
Number of Channels
1 Channel
Drain to Source Resistance (on) (Rds)
10.9 mΩ
Polarity
N-CH
Power Dissipation
42 W
Input Capacitance
1430 pF
Drain to Source Voltage (Vds)
30 V
Breakdown Voltage (Drain to Source)
30 V
Continuous Drain Current (Ids)
14A
Rise Time
8.9 ns
Input Capacitance (Ciss)
1430pF @15V(Vds)
Fall Time
5.3 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-40 ℃
Power Dissipation (Max)
2.2W (Ta), 42W (Tc)

IRF8327STRPBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Size-Length
3 mm
Size-Width
3 mm
Size-Height
1.11 mm
Operating Temperature
-40℃ ~ 150℃ (TJ)

IRF8327STRPBF Documents

Infineon
10 Pages / 0.25 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
44 Pages / 3.69 MByte
Infineon
2 Pages / 0.17 MByte
Infineon
37 Pages / 2.01 MByte

IRF8327 Documents

Infineon
Direct-FET N-CH 30V 14A
International Rectifier
IRF8327 Series Single N-Channel 30V 2.2W 9.2NC SMT Power Mosfet
Infineon
Direct-FET N-CH 30V 14A
International Rectifier
Single N-Channel 30V 2.2W 9.2NC SMT Power Mosfet - DirectFETIsometric SQ
Infineon
A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET SQ package rated at 14 amperes optimized with low on resistance.
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