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Part Datasheet Search > Infineon > IRF9130PBF Datasheet PDF
IRF9130PBF
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IRF9130PBF Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Case/Package
TO-3
Polarity
P-CH
Drain to Source Voltage (Vds)
100 V
Continuous Drain Current (Ids)
11A

IRF9130PBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active

IRF9130PBF Documents

Infineon
7 Pages / 0.8 MByte
Infineon
7 Pages / 0.24 MByte

IRF9130 Documents

Infineon
Trans MOSFET P-CH 100V 11A 3Pin(2+Tab) TO-3
International Rectifier
Trans MOSFET P-CH 100V 11A 3Pin(2+Tab) TO-3
Intersil
12A, -100V, 0.3Ω, P-Channel Power MOSFET
Samsung
P-CHANNEL POWER MOSFETS
Harris
Power Field-Effect Transistor, 12A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA
Semelab
P-CHANNEL POWER MOSFET
TT Electronics Resistors
Power Field-Effect Transistor, 11A I(D), 100V, 0.35ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3, HERMETIC SEALED, METAL, TO-3, 2 PIN
Vishay Siliconix
Power Field-Effect Transistor, 12A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204
Infineon
TO-3P-CH 100V 11A
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