IRF9953PBF Datasheet PDF - Infineon

●The IRF9953PBF is a dual P-channel MOSFET utilizes advanced processing techniques to achieve the lowest possible ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device. The HEXFET Power MOSFET is extremely efficient device for use in a wide variety of applications. The SO-8 has been modified through a customized lead-frame for enhanced thermal characteristics and dual-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space.

● Generation V technology

● Ultra low ON-resistance

● Surface-mount device

● Very low gate charge and switching losses

● Fully avalanche rated