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IRFB23N15D
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IRFB23N15D Datasheet PDF (12 Pages)
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IRFB23N15D Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Voltage Rating (DC)
150 V
Current Rating
23.0 A
Case/Package
TO-220
Polarity
N-Channel
Power Dissipation
3.80 W
Part Family
IRFB23N15D
Drain to Source Voltage (Vds)
150 V
Breakdown Voltage (Drain to Source)
150 V
Continuous Drain Current (Ids)
23.0 A
Rise Time
32 ns
Input Capacitance (Ciss)
1200pF @25V(Vds)
Fall Time
8.4 ns
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
3800 mW

IRFB23N15D Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube

IRFB23N15D Documents

Infineon
12 Pages / 0.14 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
30 Pages / 0.64 MByte
Infineon
37 Pages / 2.01 MByte

IRFB23N15 Documents

International Rectifier
Power MOSFET(Vdss=150V/ Rds(on)max=0.09Ω/ Id=23A)
IRF
Power MOSFET(Vdss=150V, Rds(on)max=0.09Ω, Id=23A)
Infineon
TO-220AB N-CH 150V 23A
International Rectifier
MOSFET, Power; N-Ch; VDSS 150V; RDS(ON) 0.09Ω; ID 23A; TO-220AB; PD 136W; VGS +/-30V
International Rectifier
150V Single N-Channel HEXFET Power MOSFET in a TO-220AB packagem
Infineon
TO-220AB N-CH 150V 23A
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