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IRFB260N
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IRFB260N Datasheet PDF (9 Pages)
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IRFB260N Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Voltage Rating (DC)
200 V
Current Rating
56.0 A
Case/Package
TO-220
Polarity
N-Channel
Power Dissipation
380 W
Part Family
IRFB260N
Drain to Source Voltage (Vds)
200 V
Breakdown Voltage (Drain to Source)
200 V
Continuous Drain Current (Ids)
56.0 A
Rise Time
64 ns
Input Capacitance (Ciss)
4220pF @25V(Vds)
Fall Time
50 ns
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
380000 mW

IRFB260N Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube

IRFB260N Documents

Infineon
9 Pages / 0.16 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
30 Pages / 0.64 MByte
Infineon
37 Pages / 2.01 MByte

IRFB260 Documents

International Rectifier
Power MOSFET(Vdss=200V/ Rds(on)max=0.04Ω/ Id=56A)
IRF
Power MOSFET(Vdss=200V, Rds(on)max=0.04Ω, Id=56A)
Infineon
TO-220AB N-CH 200V 56A
International Rectifier
MOSFET, Power; N-Ch; VDSS 200V; RDS(ON) 0.04Ω; ID 56A; TO-220AB; PD 380W; VGS +/-20V
Infineon
TO-220AB N-CH 200V 56A
International Rectifier
200V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
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