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IRFB38N20D
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IRFB38N20D Datasheet PDF (12 Pages)
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IRFB38N20D Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Case/Package
TO-220-3
Polarity
N-Channel
Power Dissipation
320 W
Part Family
IRFB38N20D
Drain to Source Voltage (Vds)
200 V
Breakdown Voltage (Drain to Source)
200 V
Continuous Drain Current (Ids)
44.0 A
Input Capacitance (Ciss)
2900pF @25V(Vds)
Input Power (Max)
3.8 W

IRFB38N20D Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Operating Temperature
-55℃ ~ 175℃ (TJ)

IRFB38N20D Documents

Infineon
12 Pages / 0.13 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
30 Pages / 0.64 MByte
Infineon
37 Pages / 2.01 MByte

IRFB38N20 Documents

Infineon
TO-220AB N-CH 200V 38A
International Rectifier
MOSFET, Power; N-Ch; VDSS 200V; RDS(ON) 0.054Ω; ID 43A; TO-220AB; PD 300W; VGS +/-30V
International Rectifier
MOSFET N-CH 200V 43A TO-220AB
Infineon
TO-220AB N-CH 200V 38A
IFA
N-Channel 200V 54mΩ 60NC Flange Mount Hexfet Power Mosfet - TO-220AB
IRF
Power MOSFET(Vdss=200V, Rds(on)max=0.054Ω, Id=44A)
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