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IRFB4510GPBF
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IRFB4510GPBF Datasheet PDF (8 Pages)
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IRFB4510GPBF Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-220-3
Polarity
N-CH
Power Dissipation
140W (Tc)
Drain to Source Voltage (Vds)
100 V
Continuous Drain Current (Ids)
62A
Rise Time
32 ns
Input Capacitance (Ciss)
3180pF @50V(Vds)
Fall Time
28 ns
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
140W (Tc)

IRFB4510GPBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Obsolete
Material
Silicon
Operating Temperature
-55℃ ~ 175℃ (TJ)

IRFB4510GPBF Documents

Infineon
8 Pages / 0.21 MByte
Infineon
3 Pages / 0.36 MByte
Infineon
4 Pages / 0.09 MByte

IRFB4510 Documents

International Rectifier
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB packagel
Infineon
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Infineon
TO-220AB N-CH 100V 62A
International Rectifier
TO220/MOSFET, 100V, 64A, 14.5MOHM, 50NC QG
International Rectifier
MOSFET N CH 100V 62A TO-220AB
Infineon
TO-220AB N-CH 100V 62A
International Rectifier
MOSFET N CH 100V 62A TO-220AB
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