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IRFB52N15D
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IRFB52N15D Datasheet PDF (12 Pages)
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IRFB52N15D Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Case/Package
TO-220
Polarity
N-Channel
Power Dissipation
320 W
Part Family
IRFB52N15D
Drain to Source Voltage (Vds)
150 V
Breakdown Voltage (Drain to Source)
150 V
Continuous Drain Current (Ids)
60.0 A
Rise Time
47 ns
Fall Time
25 ns

IRFB52N15D Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Operating Temperature
-55℃ ~ 175℃

IRFB52N15D Documents

Infineon
12 Pages / 0.13 MByte
Infineon
270 Pages / 11.59 MByte
Infineon
30 Pages / 0.64 MByte
Infineon
37 Pages / 2.01 MByte

IRFB52N15 Documents

International Rectifier
Power MOSFET(Vdss=150V/ Rds(on)max=0.032Ω/ Id=50A)
IRF
Power MOSFET(Vdss=150V, Rds(on)max=0.032Ω, Id=50A)
Infineon
TO-220AB N-CH 150V 51A
International Rectifier
MOSFET, Power; N-Ch; VDSS 150V; RDS(ON) 32Milliohms; ID 51A; TO-220AB; PD 230W; -55deg
International Rectifier
MOSFET N-CH 150V 51A TO-220AB
Infineon
TO-220AB N-CH 150V 51A
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