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IRFB9N30APBF
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IRFB9N30APBF Datasheet PDF (8 Pages)
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IRFB9N30APBF Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Case/Package
TO-220-3
Power Dissipation
96W (Tc)
Drain to Source Voltage (Vds)
300 V
Input Capacitance (Ciss)
920pF @25V(Vds)
Power Dissipation (Max)
96W (Tc)

IRFB9N30APBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Obsolete
Packaging
Tube
Operating Temperature
-55℃ ~ 150℃ (TJ)

IRFB9N30APBF Documents

Vishay Siliconix
8 Pages / 0.85 MByte
Vishay Siliconix
2 Pages / 0.04 MByte

IRFB9N30 Documents

International Rectifier
MOSFET N-CH 300V 9.3A TO-220AB
VISHAY
TO-220AB N-CH 300V 9.3A
Vishay Siliconix
MOSFET N-CH 300V 9.3A TO-220AB
VISHAY
MOSFET N-CH 300V 9.3A TO-220AB
Vishay Semiconductor
Trans MOSFET N-CH 300V 9.3A 3Pin(3+Tab) TO-220AB
Vishay Siliconix
MOSFET N-CH 300V 9.3A TO-220AB
Vishay Semiconductor
MOSFET N-CH 300V 9.3A TO-220AB
IRF
Power MOSFET(Vdss=300V, Rds(on)=0.45Ω, Id=9.3A)
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