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Part Datasheet Search > MOSFETs > Vishay Siliconix > IRFD120PBF Datasheet PDF
IRFD120PBF
$ 0.538
IRFD120PBF Datasheet PDF (8 Pages)
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IRFD120PBF Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Case/Package
DIP-4
Power Dissipation
1.3W (Ta)
Drain to Source Voltage (Vds)
100 V
Input Capacitance (Ciss)
360pF @25V(Vds)
Input Power (Max)
1.3 W
Power Dissipation (Max)
1.3W (Ta)

IRFD120PBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Operating Temperature
-55℃ ~ 175℃ (TJ)

IRFD120PBF Documents

Vishay Siliconix
8 Pages / 1.76 MByte
Vishay Siliconix
9 Pages / 1.78 MByte
Vishay Siliconix
1 Pages / 0.12 MByte

IRFD120 Documents

Vishay Siliconix
MOSFET N-CH 100V 1.3A 4-DIP
Vishay Semiconductor
MOSFET N-CH 100V 1.3A 4-DIP
VISHAY
Trans MOSFET N-CH 100V 0.5A 4Pin DIP
International Rectifier
100V Single N-Channel HEXFET Power MOSFET in a HEXDIP package
Harris
1.3A and 1.1A, 80V and 100V, 0.30 and 0.4Ω, N-Channel Power MOSFETs
ON Semiconductor
Tmos Field Effect Transistor
VISHAY
HVMDIP-4 N-CH 100V 1.3A 270mΩ
Vishay Semiconductor
MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 0.27Ω; ID 1.3A; HD-1; PD 1.3W; VGS +/-20V; -55
Vishay Siliconix
MOSFET N-CH 100V 1.3A 4-DIP
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