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Part Datasheet Search > MOSFETs > Vishay Siliconix > IRFD123PBF Datasheet PDF
IRFD123PBF
$ 5.718

IRFD123PBF Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Case/Package
DIP-4
Drain to Source Resistance (on) (Rds)
270 mΩ
Power Dissipation
1000 mW
Threshold Voltage
2 V
Drain to Source Voltage (Vds)
100 V
Rise Time
17 ns
Input Capacitance (Ciss)
360pF @25V(Vds)
Input Power (Max)
1.3 W
Fall Time
8.9 ns
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
55 ℃
Power Dissipation (Max)
1.3W (Ta)

IRFD123PBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Operating Temperature
-55℃ ~ 175℃ (TJ)

IRFD123PBF Documents

Vishay Siliconix
9 Pages / 1.79 MByte
Vishay Siliconix
9 Pages / 1.79 MByte
Vishay Siliconix
1 Pages / 0.12 MByte

IRFD123 Documents

Harris
1.3A and 1.1A, 80V and 100V, 0.30 and 0.4Ω, N-Channel Power MOSFETs
Vishay Siliconix
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
Vishay Semiconductor
Trans MOSFET N-CH 100V 1.3A 4Pin HVMDIP
International Rectifier
Power MOSFET
VISHAY
HVMDIP-4 N-CH 200V 600mA 270Ω
Vishay Siliconix
MOSFET N-CH 100V 1.3A 4-DIP
Vishay Semiconductor
VISHAY IRFD123PBF MOSFET Transistor, N Channel, 1.3A, 100V, 270mohm, 10V, 2V
International Rectifier
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