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IRFD9110PBF Datasheet PDF - Vishay Semiconductor

Manufacturer:

Vishay Semiconductor

Category:

MOSFETs

Case Package:

DIP

Description:

MOSFET, Power; P-Ch; VDSS -100V; RDS(ON) 1.2Ω; ID -0.7A; HD-1; PD 1.3W; VGS +/-20V

Pictures:

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Documentation:

IRFD9110PBF Datasheet (9 Pages)

Package Outline Dimension on8 Page

Part Numbering System on1 Page

IRFD9110PBF Datasheet PDF (9 Pages)

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IRFD9110PBF Specifications

TYPE

DESCRIPTION

Mounting Style

Through Hole

Number of Pins

4 Pin

Voltage Rating (DC)

-100 V

Current Rating

-700 mA

Case/Package

DIP

Number of Positions

4 Position

Drain to Source Resistance (on) (Rds)

1.2 Ω

Polarity

P-Channel

Power Dissipation

1.3 W

Drain to Source Voltage (Vds)

100 V

Breakdown Voltage (Drain to Source)

-100 V

Continuous Drain Current (Ids)

-700 mA, -700 mA

Rise Time

27.0 ns

Input Capacitance (Ciss)

200pF @25V(Vds)

Operating Temperature (Max)

175 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

1300 mW

View Datasheet >

IRFD9110PBF Size & Package

TYPE

DESCRIPTION

Packaging

Tube

Size-Length

6.29 mm

Size-Width

6.29 mm

Size-Height

3.37 mm

Operating Temperature

-55℃ ~ 175℃

View Datasheet >

IRFD9110PBF Environmental

IRFD9110PBF Function Overview

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IRFD9110PBF Datasheet

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