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Part Datasheet Search > MOSFETs > Vishay Siliconix > IRFD9110PBF Datasheet PDF
IRFD9110PBF
$ 0.781

IRFD9110PBF Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Case/Package
DIP-4
Power Dissipation
1300 mW
Drain to Source Voltage (Vds)
100 V
Rise Time
27 ns
Input Capacitance (Ciss)
200pF @25V(Vds)
Fall Time
17 ns
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
55 ℃
Power Dissipation (Max)
1.3W (Ta)

IRFD9110PBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Operating Temperature
-55℃ ~ 175℃ (TJ)

IRFD9110PBF Documents

Vishay Siliconix
9 Pages / 1.61 MByte
Vishay Siliconix
9 Pages / 1.6 MByte
Vishay Siliconix
1 Pages / 0.13 MByte

IRFD9110 Documents

Harris
-0.6A and -0.7A, -80V and -100V, 1.2 and 1.6Ω, P-Channel Power MOSFETs
International Rectifier
MOSFET P-CH 100V 0.7A 4-DIP
VISHAY
MOSFET P-CH 100V 700mA 4-DIP
Vishay Siliconix
MOSFET P-CH 100V 0.7A 4-DIP
Vishay Semiconductor
MOSFET P-CH 100V 0.7A 4-DIP
IRF
1W RATED POWER MOSFETs
VISHAY
HVMDIP-4P-CH 100V 700mA 1.2Ω
Vishay Semiconductor
MOSFET, Power; P-Ch; VDSS -100V; RDS(ON) 1.2Ω; ID -0.7A; HD-1; PD 1.3W; VGS +/-20V
International Rectifier
MOSFET P-CH 100V 0.7A 4-DIP
Vishay Siliconix
MOSFET P-CH 100V 0.7A 4-DIP
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