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Part Datasheet Search > MOSFETs > Infineon > IRFH5110TR2PBF Datasheet PDF
IRFH5110TR2PBF
$ 1.025
IRFH5110TR2PBF Datasheet PDF (9 Pages)
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IRFH5110TR2PBF Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
8 Pin
Case/Package
PowerVDFN-8
Number of Positions
8 Position
Drain to Source Resistance (on) (Rds)
0.0103 Ω
Polarity
N-Channel
Power Dissipation
114 W
Part Family
IRFH5110
Threshold Voltage
4 V
Drain to Source Voltage (Vds)
100 V
Continuous Drain Current (Ids)
63.0 A
Rise Time
9.6 ns
Input Capacitance (Ciss)
3152pF @25V(Vds)
Fall Time
6.4 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
3.6W (Ta), 114W (Tc)

IRFH5110TR2PBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Size-Length
6 mm
Size-Width
5 mm
Size-Height
0.9 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

IRFH5110TR2PBF Documents

Infineon
9 Pages / 0.22 MByte
Infineon
3 Pages / 0.36 MByte
Infineon
15 Pages / 0.43 MByte
Infineon
4 Pages / 0.07 MByte

IRFH5110TR2 Documents

International Rectifier
Trans MOSFET N-CH 10V 11A 8Pin PQFN EP T/R
Infineon
PQFN N-CH 10V 11A
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