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Part Datasheet Search > MOSFETs > Infineon > IRFHM792TR2PBF Datasheet PDF
IRFHM792TR2PBF
$ 0.549
IRFHM792TR2PBF Datasheet PDF (9 Pages)
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IRFHM792TR2PBF Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
8 Pin
Case/Package
PowerVDFN-8
Power Rating
2.3 W
Number of Channels
2 Channel
Number of Positions
8 Position
Drain to Source Resistance (on) (Rds)
0.164 Ω
Polarity
N-CH
Power Dissipation
10.4 W
Threshold Voltage
3 V
Drain to Source Voltage (Vds)
100 V
Breakdown Voltage (Drain to Source)
100 V
Continuous Drain Current (Ids)
2.3A
Rise Time
4.7 ns
Input Capacitance (Ciss)
251pF @25V(Vds)
Input Power (Max)
2.3 W
Fall Time
2.6 ns
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
55 ℃
Power Dissipation (Max)
2300 mW

IRFHM792TR2PBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Obsolete
Packaging
Tape & Reel (TR)
Size-Length
3.3 mm
Size-Width
3.3 mm
Size-Height
0.9 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

IRFHM792TR2PBF Documents

Infineon
9 Pages / 0.25 MByte
Infineon
4 Pages / 0.07 MByte
Infineon
2 Pages / 0.04 MByte

IRFHM792TR2 Documents

Infineon
PQFN N-CH 100V 2.3A
International Rectifier
100V Dual N-Channel HEXFET Power MOSFET in a PQFN 3.3mm x3.3mm Lead Free package
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