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Part Datasheet Search > MOSFETs > VISHAY > IRFI630GPBF Datasheet PDF
IRFI630GPBF
$ 1.585
IRFI630GPBF Datasheet PDF (8 Pages)
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IRFI630GPBF Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-220-3
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.4 Ω
Polarity
N-Channel
Power Dissipation
32 W
Threshold Voltage
4 V
Drain to Source Voltage (Vds)
200 V
Continuous Drain Current (Ids)
5.90 A
Input Capacitance (Ciss)
800pF @25V(Vds)
Input Power (Max)
35 W
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
35 W

IRFI630GPBF Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Height
9.8 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)
Minimum Packing Quantity
50

IRFI630GPBF Documents

VISHAY
8 Pages / 0.92 MByte
VISHAY
9 Pages / 0.22 MByte
VISHAY
2 Pages / 0.12 MByte

IRFI630 Documents

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200V N-Channel MOSFET
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TO-220-3 N-CH 200V 5.9A 400mΩ
Vishay Semiconductor
Trans MOSFET N-CH 200V 5.9A 3Pin(3+Tab) TO-220FP
VISHAY
TO-220FP N-CH 200V 5.9A
International Rectifier
Mosfet n-Ch 200V 5.9A To220fp
Fairchild
200V N-Channel MOSFET
Vishay Siliconix
MOSFET N-CH 200V 5.9A TO220FP
Vishay Siliconix
MOSFET N-CH 200V 5.9A TO220FP
International Rectifier
200V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) packagey
Vishay Semiconductor
MOSFET N-CH 200V 5.9A TO220FP
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