IRFI634G Datasheet PDF - Vishay Semiconductor

●DESCRIPTION

●Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

●The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The FULLPAK is mounted to a heatsink using a single clip or by a single screw fixing.

●FEATURES

●• Isolated Package

●• High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz)

●• Sink to Lead Creepage Distance = 4.8 mm

●• Dynamic dV/dt Rating

●• Low Thermal Resistance

●• Lead (Pb)-free Available