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IRFIBC40G
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IRFIBC40G Datasheet PDF (6 Pages)
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IRFIBC40G Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Voltage Rating (DC)
600 V
Current Rating
3.50 A
Polarity
N-Channel
Power Dissipation
40.0 W
Drain to Source Voltage (Vds)
600 V
Breakdown Voltage (Drain to Source)
600 V
Continuous Drain Current (Ids)
3.50 A
Rise Time
18.0 ns

IRFIBC40G Documents

International Rectifier
6 Pages / 0.16 MByte
International Rectifier
6 Pages / 0.16 MByte

IRFIBC40 Documents

International Rectifier
HEXFET power MOSFET. VDSS = 600V, RDS(on) = 1.2Ω, ID = 3.5A
IRF
Power MOSFET(Vdss=600V, Rds(on)=1.2Ω, Id=3.5A)
VISHAY
TO-220-3 N-CH 600V 3.5A 1.2Ω
International Rectifier
MOSFET N-CH 600V 3.5A TO220FP
Vishay Siliconix
MOSFET N-CH 600V 3.5A TO220FP
Vishay Semiconductor
VISHAY IRFIBC40GPBF Power MOSFET, N Channel, 3.5A, 600V, 1.2Ω, 10V, 4V
International Rectifier
MOSFET N-CH 600V 3.5A TO220FP
VISHAY
TO-220-3 N-CH 600V 3.5A 1.2Ω
Vishay Siliconix
MOSFET N-CH 600V 3.5A TO220FP
Vishay Semiconductor
Trans MOSFET N-CH 600V 3.5A 3Pin(3+Tab) TO-220 Full-Pak
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